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A Product Line of
Diodes Incorporated
DMN3024LSD
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source voltage
Gate-Source voltage
Characteristic
(Notes 3 & 5)
Symbol
V DSS
V GS
Value
30
± 20
7.2
Unit
V
V
Continuous Drain current
V GS = 10V
T A = 70°C (Notes 3 & 5)
(Notes 2 & 5)
I D
5.8
5.7
A
(Notes 2 & 6)
6.8
Pulsed Drain current
V GS = 10V
(Notes 4 & 5)
I DM
34
A
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Notes 3 & 5)
(Notes 4 & 5)
I S
I SM
3.3
34
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
(Notes 2 & 5)
Symbol
Value
1.3
10.0
Unit
Power dissipation
Linear derating factor
(Notes 2 & 6)
P D
1.8
14.3
W
mW/ ° C
(Notes 3 & 5)
(Notes 2 & 5)
2.0
15.9
100
Thermal Resistance, Junction to Ambient
(Notes 2 & 6)
R θ JA
70
° C/W
(Notes 3 & 5)
63
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Notes 5 & 7)
R θ JL
T J , T STG
53
-55 to 150
° C/W
° C
Notes:
2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t ≤ 10 sec.
4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 μs. The pulse current is limited by the maximum junction temperature.
5. For a dual device with one active die.
6. For a device with two active die running at equal power.
7. Thermal resistance from junction to solder-point (at the end of the drain lead): the device is operating in a steady-state condition.
DMN3024LSD
Document Revision: 3
2 of 8
www.diodes.com
July 2009
? Diodes Incorporated
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